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UTC 2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage VCE(sat)= 0.5V(Max) *High speed switching time: tstg=1.0S(Typ.)
1
TO-251
1:BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25C)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic IB Pc Tj Tstg
LIMITS
80 80 5 2 1 1 150 -55 ~ +150
UNIT
V V V A A W C C
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
SYMBOL
V(BR)CEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
TEST CONDITIONS
Ic= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, Ic=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A Ic=1A, IB=0.05A Ic=1A, IB=0.05A VCE=2V, Ic=0.5A VCB= 10V, IE= 0, f=1MHz
MIN
80
TYP
MAX
1.0 1.0 240
UNIT
V A A
70 40 0.15 0.9 100 30
0.5 1.2
V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R213-006,B
UTC 2SC3669
PARAMETER
Turn-on Time Storage Time Switching Time Fall Time
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
ton tstg
IB1 IB2
TEST CONDITIONS
20s INPUT IB2 IB1 OUTPUT 30
MIN
TYP
0.2 1.0
MAX
UNIT
s
Vcc=30 V
tf
IB1= -IB2=0.05A DUTY CYCLE1%
0.2
CLASSIFICATION OF hFE1
RANK RANGE O 70-140 Y 120-240
ELECTRICAL CHARACTERISTICS CURVES
Ic-VCE 25 35 20 15 10 Collector -Emitter Voltage, Vc E (V) 2.0 Collector Current, Ic (A) 1.6 1.2 0.8 0.4 0 0 2 4 6 1 0.8 IB=5mA 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 15 20 30 VCE-Ic Common Emitter Ta=25
IB=5mA Common Emitter Ta=25 8 10 12 Collector -Emitter Voltage, VcE (V)
40 50
Collector Current, Ic (A) VCE-Ic Collector -Emitter Voltage, Vc E (V) Collector -Emitter Voltage, Vc E (V) 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 IB=5mA 10 15 20 30 40 50 Common Emitter Ta=100 2.0 2.4 1 IB=5mA 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 10 15 20 30 40 50 70 Common Emitter Ta=-55 2.0 2.4 VCE-Ic
Collector Current, Ic (A)
Collector Current, Ic (A)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R213-006,B
UTC 2SC3669
500 DC Current Gain hFE 300
NPN EPITAXIAL SILICON TRANSISTOR
hFE -Ic Collector Emitter Saturation Voltage, VCE(sat) VCE(sat) -Ic 0.5 0.3 Common Emitter Ic/IB=20 Ta=100 0.1 0.05 0.03 0.01 0.01 Ta=25 Ta=-55
Common Emitter VCE=2V
Ta=100 Ta=25 Ta=-55
100 50 30
10 0.01
0.03
0.1
0.3
1
2
0.03 0.05 0.1
0.3 0.5
1
Collector Current Ic (A)
Collector Current Ic (A)
VBE(sat) -Ic Base Emitter Saturation Voltage, VBE(sat) 3 Collector Current, Ic (A) Common Emitter Ic/IB=20 Ta=-55 1 0.5 0.3 Ta=25 Ta=100 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 Common Emitter VCE=2 V Ta=100 Ta=25
Ic-VBE
Ta=-55
0.1 0.01
0.03 0.05 0.1
0.3 0.5
1
2
0.6
0.8
1.0
1.2
1.6
Collector Current, Ic (A)
Base -Emitter Voltage, VBE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R213-006,B

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